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What does IGBT stand for?
IGBT stands for insulated gate bipolar transistor. Invented by C. Frank Wheatley Jr., IGBTs combine the simple gate drive characteristics of the MOSFETs with the high current and low saturation voltage capability of bipolar transistors. Hence, IGBTs have lower on-state voltage drop with high blocking voltage capabilities in addition to fast switching speeds.
EE Times India total search 5 Related Posts sort by date sort by relevance
Date Title Asker Views/Replies Forum
2012-02-01 IGBT Characteristics
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2010-08-13 Isolated gate drivers offer IGBT protection
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2009-09-03 TD350 IGBT driver: Principle of operation, applications
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2008-12-28 IGBT Tutorial: Static, dynamic characteristics
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2008-08-27 IGBT tutorial: Selection
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